The 26^{26}Al Gamma-ray Line from Massive-Star Regions

The measurement of gamma rays from the diffuse afterglow of radioactivity originating in massive-star nucleosynthesis is considered a laboratory for testing models, when specific stellar groups are investigated, at known distance and with well-constrained stellar population. Regions which have been exploited for such studies include Cygnus, Carina, Orion, and Scorpius-Centaurus. The Orion region hosts the Orion OB1 association and its subgroups at about 450~pc distance. We report the detection of $^{26}$Al gamma rays from this region with INTEGRAL/SPI.Comment: Contribution to Symposium "Nuclei in the Cosmos XIV", Niigata, Japan, Jun 2016; 3 pages, 2 figures; accepted for publication in JPS (Japan Physical Society) Conference Proceedings http://jpscp.jps.jp

Resonant relativistic corrections and the A_y problem

We study relativistic corrections to nuclear interactions caused by boosting the two-nucleon interaction to a frame in which their total momentum does not vanish. These corrections induce a change in the computed value of the neutron-deuteron analyzing power A_y that is estimated using the plane-wave impulse approximation. This allows a transparent analytical calculation that demonstrates the significance of relativistic corrections. Faddeev calculations are however needed to conclude on the A_y puzzle.Comment: 8 pages, 2 figures, minor addition, to appear in Phys. Rev.

ELSA and the frontiers of astrometry

ELSA stands for the ambitious goal of `European Leadership in Space Astrometry'. In this closing contribution I will examine how the ELSA network has advanced this goal. I also look ahead to the time when the Gaia data will be published and consider what needs to be done to maintain European leadership.Comment: Closing remarks at the ELSA conference "Gaia: at the frontiers of astrometry". Proceedings editors: C. Turon, F. Arenou & F. Meynadie

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings